Monday 25 April 2022
In this video Erik Bakkers from the Eindhoven University of Technology presents his team contribution to the TOPSQUAD project: growing high quality Ge/Si nanowires as a topological material. Significant steps have been made on the control of the in-plane growth of these nanowires by making use of the Selective Area Growth method. Our partners from the University of Basel and University of Twente develop single-wire and double-wire devices and aim for the observation of the Majorana bound states. The transport measurements have shown induced superconductivity in the nanowires through the silicon shell, a novelty in this platform, which is crucial to avoid the metallization problem.