Zeiss MERLIN HR-SEM
Main Characteristics:
- Accelaration voltage, 20V - 30kV
- Point resolution (SEM), 0.9nm@30kV in STEM mode, 1.2 nm in normal SEM mode
- Spatial resolution EDX, down to nm. range, applicable for elements above boron in the Periodic System
Facilities:
General SEM imaging
- High Efficiency Secondary Electron Detector (HE-SE2) for standard low energy electron topographical mapping
- Inlens detector for higher energy secondary electrons for clear topographic mapping
- Annular Selective Backscatter detector (ASB) for compositional and crystal orientation mapping
- Energy Selective Backscatter detector (ESB) for compositional contrast mapping
- Scanning TEM (STEM) possibility with best SEM resolution
- Electron Beam Induced Current (EBIC) for conductivity mappings
- Energy Dispersive X-ray with shutter(EDX) for elemental mappings
- Electron Backscatter Diffraction (EBSD) for mappings of crystal orientations.
- Charge compensator with N2 gas / sample cleaning with O2 gas
- Built in plasma cleaner
- Heating stage, up to 800 °C
- EDX and EBSD are shielded for high temperatures
- Sample holders for many different types of SEM samples, 4” wafers, single stub, multiple stubs, 45° , 70°, 90° cross section holders, flat clamps, tilted clamps, double sided carbon tape, aluminum tape, copper tape, MFM tip holder, EBSD and transmissive EBSD holders.
PLEASE CONTACT:
