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2A: Advanced Semiconductor Device Physics (201900135)

Teaching Staff

Period

2A

Course Description

This course focusses on the advancements of semiconductor device physics. It covers the physics behind various semiconductor devices based on the latest developments in the field. In addition to background information of novel device concepts beyond mainstream IC technology (”beyond Moore” or ”beyond CMOS”), it also explains the physics of some of the novel devices commonly used in the so-called ”more than Moore” route, such as heterojunction bipolar transistors and power devices.

For this course prior knowledge of the basic semiconductor physics and also semiconductor device physics is needed (e.g., MOD7a).
 
Important note:

  1. Lectures will be given depending on the number of attendees. If that number is 5 or higher there will be lectures. If not, the student should study the material him or herself.
  2. During the teaching period of this course the type of assessment depends on the number of attendees. If that number is 5 or higher a written examination will be prepared in block 2A, otherwise an oral examination will be taken place. Further, throughout the year the student will be able to have an oral examination but then also he or she should do the course through self-studies.

Goals

The main objective of this course is that

  • students know and understand both the principles behind and the functioning of advanced key semiconductor devices widely adopted in the semiconductor industry, such as heterojunction bipolar devices, FD-SOI CMOS and power field-effect devices.

Below the objectives for this course are summarized by stating the capabilities that students, after completion of this course, are expected to possess.

In the context of microelectronic (system) design:

  • students understand the use of modelling of devices, describing the behaviour of the devices in terms that are relevant to the actual design environment;
  • students are able to present the first order models of various types of junction diodes, bipolar transistors and field-effect devices in the context of the dc design level. For components where high frequency (signal or switching) behaviour is key, also the small-signal (high frequency) design level properties are known and understood;
  • students are able to relate (qualitatively) the components of these models to the physical and geometrical properties of the devices;
  • students appreciate the major challenges of device development in the context of analogue, digital and microsystem design


In the context of fundamental concepts and principle technologies:

  • students understand the principle of junction formation;
  • students poses understanding of the behaviour of charge carriers in heterojunction devices and metal-semiconductor contacts;
  • students understand a number of relevant/key issues related to CMOS devices;
  • students poses understanding of the basic working of FD-SOI CMOS, and of steep subthreshold and power devices;
  • students appreciate the major challenges in technology and trends in device development.

In the context of the contribution of this course to skills defined as Meiers criteria:

  • Disciplinary EE Knowledge: the student has a thorough mastery of parts of the relevant field extending to the forefront of knowledge (e.g., latest theories, methods, techniques).
  • EE Research Competence: The student is able to assess research within the discipline on its scientific value.

Intellectual skills: The student is able to recognize fallacies and is able to assess a standpoint with regard to a scientific argument in the field critically as to its value.

Instructional modes

  • Lecture
  • Self study with assistance

Study Material

Mandatory

  • “Advancements in Semiconductor Device Physics” by R.J.E. Hueting

Entry Requirements

Mandatory

Electrical engineering bachelor M7a (or equivalent): Basic knowledge of semiconductor physics and semiconductor devices (PN junction diode and MOSFET).