Student Info

Supervisor: 

Pavel Markeev

Goal:

Research the dependence between energy of exciting light and photo response of 2D Transition Metal Dichalcogenide crystals

Project work:

AFM topography measurements; Kelvin Probe Force Microscopy measurements to determine the surface potential.

Supervisor:

Tao Chen, or Bram van de Ven or Floris Zwanenburg

Goal:

Realizing hopping conduction at room temperature in silicon or silicon carbide. Repeating established machine learning tasks and exploring more.

Project work:

Micro/nano-fabrication, electrical characterization. 

Supervisors:

TBD: Bram v. d. Ven, U. Alegre Ibarra, HC Ruiz Euler

Goal:

Optimize the entire life cycle of our Boron-doped silicon devices

Project work:

Optimize the development of our devices at different stages of the device's life cycle, from the fabrication to training via data acquisition, neural network modeling and analysis of the device's physical and computational capabilities. In this project there is a variety of aspects suitable for the student's interest. For instance, you can analyze and optimize training of neural networks, improve the data acquisition by analyzing the devices' response characteristics or study the computational capabilities of our devices to develop procedures that improve the design of the device.

Note:

Projects will not be available until September 2020

Supervisors:

Zhen Wu

Goal:

The subject of Majorana bound state (MBS), is of great interest for topological quantum computing. Our goal is to detect such state in superconductor-semiconductor hybrid nanowire systems, for instance, a Al-Ge/Si core-shell nanowire-Al Josephson junction

Project work:

• Nanowire deposition with micromanipulator.
• Device fabrication involving a series of advanced techniques (e.g. Electron-beam lithography, Sputtering, Evaporation, etc.)
• Cryogenic transport measurements in dilution refrigerator with a base temperature of 15mK.
• Collaboration with QTM/ICE group.

Supervisors:

António J. Sousa de Almeida, Guus Huitenga

Project work:

Device design and fabrication; electrical characterization and qubit operation at cryogenic temperatures. Time-resolved and microwave measurements for spin read out and manipulation of individual spins bound to a single heavy-atom in silicon via spin resonance experiments.

A single atom is a very fundamental quantum system that provides a very logical candidate for a qubit. In this project we aim at fabricating single heavy-atom transistors in silicon. By using heavy elements in silicon, we aim at single-atom spin qubits with exceptional control of spin states via the spin-orbit interaction, and with exceptionally long coherence times. We aim to identify individual dopant atoms via transport spectroscopy and via charge sensing and ultimately perform readout and coherent control of single spins bound to a heavy atom in silicon via time-resolved and microwave experiments.

The depletion-mode design avoids complex multilayer architectures requiring precision alignment and allows directly adopting best practices already developed for depletion dots in other material systems, such as GaAs/AlGaAs and SiGe. We define Si QDs in an electron or hole gas at the Si/SiO2 interface through electrostatic gating. The nature of the charge gas can be tuned via the gate stack composition and growth conditions. For this project, we have on-going collaborations with the group of Prof. Erwin Kessels at University of Eindhoven, and with the group of Prof. Dominik Zumbühl at University of Basel, Switzerland.

We have developed a ambipolar charge sensing technique by using an electron and a hole quantum dot to sense charge displacement in the other. This electrical transport technique Is highly sensitive and enables us to detect single-electron and single-hole occupation in silicon quantum dots. Thus, we expect ambipolar charge sensing to provide a means to further study ambipolar devices, which have so far been studied in the many-charge regime via direct transport measurements.

The realization of a quantum computer based on spin qubits realized in silicon depends on the capability to fabricate qubits that are robust, reproducible, and scalable. To this end, we perform systematic low-temperature electrical characterization of silicon quantum dot devices. The devices are fabricated at imec in Leuven, Belgium, in a CMOS foundry environment and using 300mm processing technology.