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key recent publications nanoelectronics group

Quantum Transport in SnTe Nanowire Devices
F. J. Witmans, M. G. C. Mientjes, M. J. G. Kamphuis, V. van de Sande, X. Guan, H. Bolten, M. A. Verheijen, C. Li, J. Ridderbos, E. P. A. M. Bakkers, A. Brinkman, & F. A. Zwanenburg.
Advanced Electronic Materials, 202500027 (2025).

The rise of intelligent matter
C. Kaspar, B. J. Ravoo, W. G. van der Wiel, S. V. Wegner and W. H. P. Pernice
Nature 594, 345–355 (2021)

The germanium quantum information route
Giordano Scappucci, Christoph Kloeffel, Floris A. Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, Menno Veldhorst.
Nature Reviews Materials (2020)

A deep-learning approach to realizing functionality in nanoelectronic devices
Hans-Christian Ruiz Euler, Marcus N. Boon, Jochem T. Wildeboer, Bram van de Ven, Tao Chen, Hajo Broersma, Peter A. Bobbert and Wilfred G. van der Wiel
Nature Nanotechnology 15, 992-998 (2020)

Hard superconducting gap and diffusion-induced superconductors in Ge-Si nanowires
Joost Ridderbos, Matthias Brauns, Jie Shen, Folkert K. de Vries, Ang Li, Sebastian Kölling, Marcel A. Verheijen, Alexander Brinkman, Wilfred G. van der Wiel, Erik P. A. M. Bakkers, Floris A. Zwanenburg.
Nano Letters 20, 1 p. 122 (2020)

Classification with a disordered dopant-atom network in silicon
T. Chen, J. van Gelder, B. van de Ven, S. Amitonov, B. de Wilde, H.-C. Ruiz Euler,
H. J. Broersma, P. A. Bobbert, F. A. Zwanenburg, W.G. van der Wiel
Nature 577, 341-345 (2020)

Josephson effect in a few-hole quantum dot
J. Ridderbos, M. Brauns, J. Shen, F. K. de Vries, A. Li, E. P. A. M. Bakkers, A. Brinkman & F. A. Zwanenburg
Advanced Materials 30, 44 1802257 (2018).

Electron–Hole Confinement Symmetry in Silicon Quantum Dots
F. Mueller, G. Konstantaras, P.C. Spruijtenburg, W. G. van der Wiel & F. A. Zwanenburg
Nano Letters 15, pp. 5336-5341 (2015)

Silicon Quantum Electronics
F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Simmons, L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Coppersmith & M. A. Eriksson
Reviews of Modern Physics 85, 961 (2013)

All publications nanoelectronics group

2025

Automated tuning and characterization of a single-electron transistor charge sensor
A. Paurevic, A. Sakr, T. Joshi, D. van der Bovenkamp, Q. Torrent Nicolau, F. A. Zwanenburg, & J. Baugh.
https://arxiv.org/abs/2502.02521.

2024

Critical nonlinear aspects of hopping transport for reconfigurable logic in disordered dopant networks
H. Tertilt, J. Mensing, M. Becker, W. G. van der Wiel, P. A. Bobbert, A Heuer
Physical Review Applied 22 (2), 024063 (2024)

Brain-inspired computing systems: a systematic literature review
M. Zolfagharinejad, U. Alegre-Ibarra, T. Chen, S. Kinge and W. G. van der Wiel
Eur. Phys. J. B 97, 70 (2024)

Magnetic field enhanced critical current in Ge–Si nanowire Josephson junctions
Z. Wu, J. Ridderbos, A. Li, A. A. Golubov, F. A. Zwanenburg, E. P. A. M. Bakkers, A. Brinkman, & C. Li.
Applied Physics Letters, 125, 012603 (2024).

A kinetic Monte Carlo Approach for Boolean Logic Functionality in Gold Nanoparticle Networks
J. Mensing, W.G. van der Wiel and A. Heuer
Front. Nanotechnol. 6, 1364985 (2024)

When Machine Learning Meets 2D Materials: A Review
Bin Lu, Yuze Xia, Yuqian Ren, Miaomiao Xie, Liguo Zhou, Giovanni Vinai, Simon A. Morton, Andrew T.S. Wee, Wilfred G. van der Wiel, Wen Zhang, Ping Kwan Johnny Wong
Adv. Sci. 11, 2305277 (2024)

2023

Brains-py, A framework to support research on energy-efficient unconventional hardware for machine learning
U. Alegre-Ibarra, H.-C. Ruiz Euler, H. A. Mollah, B. P. Petrov, S. S. Sastry, M. N. Boon, M. P. de Jong, M. Zolfagharinejad, F. M. J. Uitzetter, B. van de Ven, A. J. Sousa de Almeida, S. Kinge, and W. G. van der Wiel
Journal of Open Source Software 8(90), 5573 (2023)

Toward a formal theory for computing machines made out of whatever physics offers
H. Jaeger, B. Noheda and W.G. van der Wiel
Nat. Commun. 14, 4911 (2023)

Dopant network processing units as tuneable extreme learning machines
B. van de Ven, U. Alegre-Ibarra, P. J. Lemieszczuk, P. A. Bobbert, H.-C. Ruiz Euler, W. G. van der Wiel
Front. Nanotechnol. 5, 1055527 (2023).

Thin-film (Al)BCN materials synthesized by sequential precursor pulses to mimic atomic layer deposition
Apaydin, R. O., Aarnink, A. A. I., Gravesteijn, D. J., De Jong, M. P. & Kovalgin, A. Y.
AIP advances, 13(2). Article 025237.

FPGA-accelerated Quantum Transport Measurements
T. Haarman, A. J. Sousa de Almeida, A. J. A. Heskes, F. A. Zwanenburg & N. Alachiotis.
International Conference on Field Programmable Technology (ICFPT), pp. 44-52 (2023).

2022

Exciton Dynamics in MoS2-Pentacene and WSe2-Pentacene Heterojunctions
Markeev, P. A., Najafidehaghani, E., Samu, G. F., Sarosi, K., Kalkan, S. B., Gan, Z., George, A., Reisner, V., Mogyorosi, K., Chikan, V., Nickel, B., Turchanin, A. & de Jong, M. P.
ACS nano, 16(10), 16668-16676.

Hopping-Transport Mechanism for Reconfigurable Logic in Disordered Dopant Networks
Henri Tertilt, Jesse Bakker, Marlon Becker, Bram de Wilde, Indrek Klanberg, Bernard J. Geurts,
Wilfred G. van der Wiel, Andreas Heuer, and Peter A. Bobbert
Phys. Rev. A 17, 064025 (2022)

Progress in epitaxial growth of stanene
Ochapski, M. W. & De Jong, M. P.
Open physics, 20(1), 208-223.

2021

In-Materio Reservoir Computing in a Sulfonated Polyaniline Network
Yuki Usami, Bram van de Ven, Dilu G. Mathew, Tao Chen, Takumi Kotooka, Yuya Kawashima, Yuichiro Tanaka, Yoichi Otsuka, Hiroshi Ohoyama, Hakaru Tamukoh, Hirofumi Tanaka,* Wilfred G. van der Wiel,* and Takuya Matsumoto*
Adv. Mater. 33, 2102688 (2021)

Dopant Network Processing Units: Towards Efficient Neural-network Emulators with High-capacity Nanoelectronic Nodes
Hans-Christian Ruiz Euler, Unai Alegre-Ibarra, Bram van de Ven, Hajo Broersma, Peter A. Bobbert, Wilfred G. van der Wiel
Neuromorph. Comput. Eng. 1, 024002 (2021)

Li intercalation into multilayer graphene with controlled defect densities
Ochapski, M. W., Ataç, D., Sanderink, J. G. M., Kovalgin, A. Y. & de Jong, M. P.
Carbon trends, 4. Article 100045.

The rise of intelligent matter
C. Kaspar, B. J. Ravoo, W. G. van der Wiel, S. V. Wegner and W. H. P. Pernice
Nature 594, 345–355 (2021)

Energy-Level Alignment at Interfaces between Transition-Metal Dichalcogenide Monolayers and Metal Electrodes Studied with Kelvin Probe Force Microscopy Markeev, P. A., Najafidehaghani, E., Gan, Z., Sotthewes, K., George, A., Turchanin, A. & de Jong, M. P
The Journal of physical chemistry C, 125(24), 13551-13559..

Gradient Descent in Materio
M. N. Boon, H.-C. Ruiz Euler, T. Chen, B. van de Ven, U. Alegre Ibarra, P. A. Bobbert and W. G. van der Wiel
arxiv.org/abs/2105.11233 (2021)

Strong spin-orbit interaction and g-factor renormalization of hole spins in Ge/Si nanowire quantum dots
F. N. M. Froning, M. J. Rančić, B. Hetényi, S. Bosco, M. K. Rehmann, A. Li, E. P. A. M. Bakkers, F. A. Zwanenburg, D. Loss, D. M. Zumbühl, & F. R. Braakman.
Phys.Rev. Research 3, 013081 (2021), or https://arxiv.org/abs/2007.04308.

2020

The germanium quantum information route
G. Scappucci, C. Kloeffel, F. A. Zwanenburg, D. Loss, M. Myronov, J-J. Zhang, S. De Franceschi, G. Katsaros, & M. Veldhorst.
Nature Reviews Materials (2021) or https://arxiv.org/abs/2004.08133.

Surface acoustic waves as a sensitive probe for photoresponsive polarization memory in SrTiO₃
Y. Uzun, I. Gurbuz, M. P. de Jong, W. G. van der Wiel
Journal of Physics D: Applied Physics 53, 335301 (2020)

Effect of Pb(Zr_0.52Ti_0.48)O₃ thin films on electron transport at the LaAlO₃/SrTiO₃ interface by surface acoustic waves
Y. Uzun, D. Doller, A. E. M. Smink, M. D. Nguyen, M. P. de Jong, W. G. van der Wiel
Journal of Applied Physics 127, 214901 (2020)

Anomalous Scaling of Parasitic Capacitance in FETs with a High-K Channel Material
A. E. M. Smink, M. J. de Jong, H. Hilgenkamp, W. G. van der Wiel, J. Schmitz
2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS)

Electrochemical Detection of Tumor-Derived Extracellular Vesicles on Nanointerdigitated Electrodes
D. G. Mathew, P. Beekman, S. G. Lemay, H. Zuilhof, S. le Gac,
W. G. van der Wiel
Nano Letters 20, 820-828 (2020)

Electron Trapping Mechanism in LaAlO3/SrTiO3 Heterostructures
C. Yin, A. E. M. Smink, I. Leermakers, L. M. K. Tang, N. Lebedev, U. Zeitler, W. G. van der Wiel, H. Hilgenkamp, J. Aarts
Physical Review Letters 124, 017702 (2020)

Acoustoelectric charge transport at the LaAlO₃/SrTiO₃ interface
Y. Uzun, A. E. M. Smink, M. P. de Jong, H. Hilgenkamp, W. G. van der Wiel
Applied Physics Letters 116, 011601 (2020)

Hard Superconducting Gap and Diffusion-Induced Superconductors in Ge–Si Nanowires
J. Ridderbos, M. Brauns, F. K. de Vries, J. Shen, A. Li, S. Kölling, M. A. Verheijen,
A. Brinkman, W. G. van der Wiel, E. P. A. M. Bakkers, F. A. Zwanenburg
Nano Letters 20, 122-130 (2020)

Ambipolar charge sensing of few-charge quantum dots
A. J. Sousa de Almeida, A. Márquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, & F. A. Zwanenburg.
Phys. Rev. B 101, 201301(R) (2020) or https://arxiv.org/abs/2001.05045.

2019

Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction
J. Ridderbos, M. Brauns, A. Li, E. P. A. M. Bakkers, A. Brinkman, W. G. van der Wiel,
F. A. Zwanenburg
Physical Review Materials 3, 084803 (2019)

Zeeman-effect-induced 0-π transitions in ballistic Dirac semimetal Josephson junctions
C. Li, B. de Ronde, J. de Boer, J. Ridderbos, F. A. Zwanenburg, Y. Huang, A. A. Golubov, A. Brinkman.
Phys. Rev. Lett. 123, 026802 (2019).

Short-Channel Vertical Organic Field-Effect Transistors with High On/Off Ratios
T. Dogan, R. Verbeek, A. J. Kronemeijer, P. A. Bobbert, G. H. Gelinck, W. G. van der Wiel
Advanced Electronic Materials 5, 1900041 (2019)

2018

Spin-orbit interaction and induced superconductivity in a one-dimensional hole gas
F. K. de Vries, J. Shen, R.J. Skolasinski, M. P. Nowak, D. Varjas, L. Wang, M. Wimmer, J. Ridderbos, F. A. Zwanenburg, A. Li, S. Koelling, M. A. Verheijen, E. P. A. M. Bakkers & L. P. Kouwenhoven
Nano Letters 18, 10 p. 6483 (2018).

Josephson effect in a few-hole quantum dot
J. Ridderbos, M. Brauns, J. Shen, F. K. de Vries, A. Li, E. P. A. M. Bakkers, A. Brinkman & F. A. Zwanenburg
Advanced Materials 30, 44 1802257 (2018).

Single, double, and triple quantum dots in Ge/Si nanowires
F. N. M. Froning, M. K. Rehmann, J. Ridderbos, M. Brauns, F. A. Zwanenburg, A. Li, E. P. A. M. Bakkers, D. M. Zumbühl & F. R. Braakman
Applied Physics Letters 113, 073102 (2018).

Versatile Micropatterns of N‐Heterocyclic Carbenes on Gold Surfaces: Increased Thermal and Pattern Stability with Enhanced Conductivity
D. Thao Nguyen, M. Freitag, Martin Körsgen, Sebastian Lamping, Andreas Rühling, Andreas H. Schäfer, Martin H. Siekman, Heinrich F. Arlinghaus, Wilfred G. van der Wiel, Frank Glorius, Bart Jan Ravoo
Angew. Chem. Int. Ed. 57, 11465 (2018)

Palladium gates for reproducible quantum dots in silicon
M. Brauns, S. V. Amitonov, P. C. Spruijtenburg & F. A. Zwanenburg
Scientific Reports 8, 5690, (2018).

Correlation between superconductivity, band filling, and electron confinement at the LaAlO₃/SrTiO₃ interface
A.E.M. Smink, M.P. Stehno, J.C. de Boer, A. Brinkman, W.G. van der Wiel and H. Hilgenkamp
Phys. Rev. B 97, 245113 (2018).

A fabrication guide for planar silicon quantum dot heterostructures
P. C. Spruijtenburg, S. V. Amitonov, W. G. van der Wiel and F. A. Zwanenburg
Nanotechnology 29, 143001 (2018)

3D-fabrication of tunable and high-density arrays of crystalline silicon nanostructures
J.G.E. Wilbers, J. Berenschot, R. Tiggelaar, T. Dogan, K. Sugimura, W.G. van der Wiel, J.G.E. Gardeniers, N. Tas,
J. Micromechanics and Microengineering 28, 044003 (2018)

Depletion-mode Quantum Dots in Intrinsic Silicon
S. V. Amitonov, P. C. Spruijtenburg, M. W. S. Vervoort, W. G. van der Wiel and F. A. Zwanenburg
Applied Physics Letters 112, p. 023102 (2018)

Highly doped silicon nanowires by monolayer doping
J. Veerbeek, L. Ye, W. Vijselaar, T. Kudernac, W.G. van ver Wiel, and J. Huskens
J.Nanoscale, 9(8), 2836-2844 (2018)

2017

Fabrication, electrical characterization and device simulation of vertical P3HT field-effect transistors
B.J. Xu, T. Dogan, J.G.E. Wilbers, M.P. de Jong, P.A. Bobbert, W.G. van der Wiel
Journal of Science: Adv. Mater. Dev. 2, 501 (2017)

Effect of Coulomb correlation on charge transport in disordered organic semiconductors
F.L. Liu, H. van Eersel, B.J. Xu, J.G.E. Wilbers, M.P. de Jong, W.G. van der Wiel, P.A. Bobbert, R. Coehoorn
Phys. Rev. B 96, 205203 (2017)

Bottom-Up Single-Electron Transistors
K.S. Makarenko, Z.H. Liu, M.P. de Jong, F.A. Zwanenburg, J. Huskens, W.G. van der Wiel
Adv. Mater. 29, 1702920 (2017)

Doping of semiconductors by molecular monolayers: monolayer formation, dopant diffusion and applications
L. Ye, T. Kudernac, M.P. de Jong, W.G. van der Wiel and J. Huskens
Mater. Sci. Semicond. Proc. 62, 128-134 (2017)

Monolayer Contact Doping from a Silicon Oxide Source Substrate
L. Ye, A. Gonzalez-Campo, T. Kudernac, R. Nunez, M.P. de Jong, W.G. van der Wiel, J. Huskens
Langmuir 33, 3635-3638 (2017)

Gate-tunable band structure of the LaAlO₃ -SrTiO₃ interface,
A.E.M. Smink, J.C. de Boer, M.P. Stehno, A. Brinkman, W.G. van der Wiel and H. Hilgenkamp
Phys. Rev. Lett. 118, 106401 (2017)

Highly doped silicon nanowires by monolayer doping
J. Veerbeek, L. Ye, W. Vijselaar, T. Kudernac, W.G. van der Wiel, J. Huskens
Nanoscale 9, 2836-2844 (2017)

Charge transport in nanoscale vertical organic semiconductor pillar devices
J.G. E. Wilbers, B. Xu, P.A. Bobbert, M.P. de Jong and W.G. van der Wiel
Scientific Reports 7, 41171 (2017)

Monolayer Contact Doping from a Silicon Oxide Source Substrate
L. Ye, A. González-Campo, T. Kudernac, R. Núñez, M.P. de Jong, W.G. van der Wiel, J. Huskens
Langmuir, 33(15), 3635-3638 (2017)

Using neural networks to predict the functionality of reconfigurable nano-material networks
K. Greff, R.M.J. van Damme, J. Koutnik, H.J. Broersma, J.O. Mikhal, C.P. Lawrence, W.G. van der Wiel, J. Schmidhuber
International journal on advances in intelligent systems, 9(3&4), 339-351 (2017)

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires
S. Conesa-Boj, A. Li, S. Koelling, M. Brauns, J. Ridderbos, T. T. Nguyen, M. A. Verheijen, P. M. Koenraad, F. A. Zwanenburg & E. P. A. M. Bakkers
Nano Letters 17, p. 2259-2264 (2017).

2016

A Simulation Tool for Evolving Functionalities in Disordered Nanoparticle Networks
R.M.J. van Damme, H.J. Broersma, J. Mikhal, C.P. Lawrence and W.G. van der Wiel
IEEE conference proceedings of the 2016 IEEE Congress on Evolutionary Computation (2016)

Unconventional Computing Using Evolution-in-Nanomaterio: Neural Networks meet Nanoparticle Networks
K. Greff, R.M.J. van Damme, J. Koutník, H.J. Broersma, J. Mikhal, C.P. Lawrence, W.G. van der Wiel, and J. Schmidhuber
FUTURE COMPUTING 2016: 8^th International Conference on Future Computational Technologies and Applications, ISBN: 978-1-61208-461-9 (2016)

Anisotropic Pauli spin blockade in hole quantum dots
M. Brauns, J. Ridderbos, A. Li, W.G. van der Wiel, E. P. A. M. Bakkers and F. A. Zwanenburg
Phys. Rev. B 94, 041411 (2016)

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
M. Brauns, J. Ridderbos, A. Li, W.G. van der Wiel, E. P. A. M. Bakkers and F. A. Zwanenburg
Appl. Phys. Lett. 109, 143113 (2016)

Geometric reduction of dynamical nonlocality in nanoscale quantum circuits
E. Strambini, K.S. Makarenko, G. Abulizi, M.P. de Jong and W.G. van der Wiel
Scientific Reports 6, 18827 (2016)

Effect of orbital hybridization on spin-polarized tunneling across Co/C60 interfaces
K. Wang, E. Strambini, J.G.M. Sanderink, T. Bolhuis, W.G. van der Wiel, and M.P. de Jong
ACS applied materials & interfaces, 8(42), 28349-28356 (2016)

The effect of Rhδ+ dopant in SrTiO3 on the active oxidation state of co-catalytic Pt nanoparticles in overall water splitting
M.G.C. Zoontjes, K. Han, K. Han, M. Huijben, W.G. van der Wiel, G. Mul
Catalysis science & technology, 6(21), 7793-7799 (2016)

Passivation and characterization of charge defects in ambipolar silicon quantum dots
P.C. Spruijtenburg, S. Amitonov, F. Mueller, W.G. van der Wiel & F.A. Zwanenburg
Scientific reports, 6, [38127] (2016)

Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
M. Brauns, J. Ridderbos, A. Li, E. P. A. M. Bakkers & F. A. Zwanenburg
Phys. Rev. B 93, 121408(R) (2016).

2015

Boosting the Boron Dopant Level in Monolayer Doping by Carboranes
L. Ye, A. Gonzalez-Campo, R. Nunez, M.P. de Jong, T. Kudernac, W.G. van der Wiel and J. Huskens, ACS Appl. Mater. Interfaces 7, 27357-27361 (2015)

Evolution of a Designless Nanoparticle Network into Reconfigurable Boolean Logic
S.K. Bose, C.P. Lawrence, Z. Liu, K.S. Makarenko, R.M.J. van Damme, H.J. Broersma and W.G. van der Wiel
Nature Nanotechnol. 10, 1048 (2015)

Electron-Hole Confinement Symmetry in Silicon Quantum Dots
F. Mueller, G. Konstantaras, P.C. Spruijtenburg, W.G. van der Wiel and F.A. Zwanenburg
Nano Letters 15, 5336-5341 (2015)

Single-charge transport in ambipolar silicon nanoscale field-effect transistors
F. Mueller, G. Konstantaras, W.G. van der Wiel and F.A. Zwanenburg
Appl. Phys. Lett. 106, 172101 (2015)

Controlling the dopant dose in silicon by mixed monolayer doping
L. Ye, S.P. Pujari, H. Zuilhof, T. Kudernac, M.P. de Jong, W.G. van der Wiel and J. Huskens
ACS Appl. Mater. & Interfaces 7, 3231-3236 (2015)

Older publications can be found through the personal pages of corresponding authors.