UTFacultiesTNWDept NEMResearchXUVInfrastructureThin film analysis with sub atomic layer precision

Thin film analysis with sub atomic layer precision

Material analysis plays a crucial role in the development of the film fabrication process and the desired film properties. The XUV group has forefront knowledge and equipment to provide physical insight in the connection between the deposition parameters and the performance of the XUV optical components. For instance, combined analysis of low-energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) can be used to determine the sharpness of the layer interfaces and test whether the films form continuous closed layers. The high sensitivity LEIS set-up provides the most surface-sensitive analysis currently available for these thin films.

Elemental and chemical analysis can be combined with measurement of optical properties in the visual, infrared and EUV spectral ranges, providing a complete picture of the optical performance of the optics. Two high-resolution X-ray diffractometers are available for specular and off-specular reflectivity, X-ray diffraction as well as X-ray standing wave analysis with fluorescence detection. A thermal annealing stage is available for X-ray analysis of the structural changes (e.g. diffusion, crystallization) during long and short term annealing.