Process Engineering and Analysis

We report here the fabrication of silicon nitride photonic devices with a propagation loss of <0.3 dB/cm with a corresponding Q-factor of ~1million.

Electron Microscopy (TEM) is an analysis technique allowing users to image a cross-section of the material of interest with the best resolution known in the field of microscopy. The MESA+ NanoLab is equipped with a Spectra 300 for the analysis of various sample types with a diversity of TEM methods. This presentation introduces the main TEM operational modes and highlights the possibilities at our laboratory.

Dopant Network Processing Units (DNPUs), silicon-based nanoelectronics devices, have great potential as building blocks for neuromorphic computer architectures, thanks to their capability of performing both nonlinear transformations and complex classifications tasks. However, the low operational temperature (77 K) of DNPU is a serious drawback that could limit their applicability in real systems. Here we show how a small change in a relatively simple fabrication process can help overcoming this limitation and achieving room temperature operation. Moreover, we try to provide a physical explanation for this phenomenon, which is of paramount importance to further develop DNPUs.

In the quest to achieve superior overlay and focus performance for increasingly advanced product wafers, EUVL machines continuously push forward. To effectively mitigate local imaging errors, an innovative solution in the form of an over-actuated wafer table concept becomes interesting to explore. This concept involves a substantial number of actuators (thousands) that necessitate precise control with sub-nanometer accuracy in three dimensions. However, meeting the required level of accuracy, accommodating volume constraints, managing wire connections, and manufacturing embedded individual actuators present considerable challenges when relying on available technologies such as bulk piezoelectric actuators. To tackle these obstacles, monolithic actuation concepts utilizing piezoelectric thin films offer a promising solution.

The performance of the piezoelectric thin films is highly influenced by the bottom electrodes and the deposition conditions of the piezoelectric layer. In this study, we focus on optimization of the deposition conditions of LaNiO₃ (LNO) bottom electrodes and Pb(Zr_0.52Ti_0.48)O₃ (PZT) piezoelectric layer. The electrical properties of the bottom electrode have been investigated by four-point probe measurements and correlated to its surface roughness. The crystal structure analysis using XRD has revealed pure LNO (001) orientation in a broad process window, enabling the subsequent optimization of the growth of (001)-oriented PZT films. High displacements in the range of few tens of nanometers and high longitudinal piezoelectric coefficients (d_33f) have been achieved that are sufficiently usable in active wafer tables applications.