1. Electronic properties of expanded Cesium
    P.J. Kelly and D. Glötzel,
    Phys. Rev. B 33, 5284-5293 (1986).
  2. Theoretical determination of the vacancy migration energy in silicon
    P.J. Kelly, R. Car and S.T. Pantelides, in Defects in Semiconductors, edited by H.J. von Bardeleben, Materials Science Forum 10-12, (Trans Tech Publications, 1986), pp 115-120.