Hybrid memristor operated by spin polarized carriers
V. Alek Dediu, A. Riminucci, M. Calbucci, R. Cecchini, P. Graziosi, I. Bergenti
ISMN-CNR, Bologna, Italy
Information and communication technology (ICT) is calling for solutions enabling lower power consumption, further miniaturization and multifunctionality requiring the development of new device concepts and new materials. A fertile approach to meet such demands is the introduction of the spin degree of freedom into electronics devices, an approach commonly known as spintronics. This already lead to a revolution in the information storage (GMR readheads) in the last decades. Nowadays, the challenge is to bring spintronics into devices dedicated to logics, communications and storage within the same material technology .
In this context the electric control of the magnetoresistance represents one of the most promising issues enabling both further miniaturization and multifunctional operation of spintronic devices. Likewise, also the electronics community is committed to follow the Moore’s law, and one of the promising approaches is the use of arrays of crossbar memristors capable of information processing and storing (‘stateful’ logic) .
We show that an electrically controlled magnetoresistance can be achieved in organic devices  combining magnetic bistability (spin-valve) and resistance switching effects. In such devices the GMR effect can be turned ON and OFF by a programming bias that sets the device in low or high resistance state respectively. The magnitude of the GMR depends on the bias history and can be recovered up to the pristine value . Such devices operate like a magnetically modulated or spintronic memristor (SPM). SPMs can be operated in both memory and logic gate applications - two logic gates AND and IMP have been experimentally realized on the basis of a single SPM. We believe that devices merging together spintronic and electronic approaches pave the road to new future information processing paradigms .
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