Zeiss MERLIN HR-SEM

Main Characteristics:

  • Accelaration voltage, 20V - 30kV
  • Point resolution (SEM), 0.9nm@30kV in STEM mode, 1.2 nm in normal SEM mode
  • Spatial resolution EDX, down to nm. range, applicable for elements above boron in the Periodic System

Facilities:
General SEM imaging

  • High Efficiency Secondary Electron Detector (HE-SE2) for standard low energy electron topographical mapping
  • Inlens detector for higher energy secondary electrons for clear topographic mapping
  • Annular Selective Backscatter detector (ASB) for compositional and crystal orientation mapping
  • Energy Selective Backscatter detector (ESB) for compositional contrast mapping
  • Scanning TEM (STEM) possibility with best SEM resolution
  • Electron Beam Induced Current (EBIC) for conductivity mappings
  • Energy Dispersive X-ray with shutter(EDX) for elemental mappings
  • Electron Backscatter Diffraction (EBSD)  for mappings of crystal orientations.
  • Cathodo Luminescence (CL) for measuring optical emission spectra in the UV - visible - IR range

  • Charge compensator with N2 gas / sample cleaning with O2 gas
  • Built in plasma cleaner
  • Heating stage, up to 800 °C
  • EDX and EBSD are shielded for high temperatures
  • Sample holders for many different types of SEM samples, 4” wafers, single stub, multiple stubs, 45° , 70°, 90° cross section holders, flat clamps, tilted clamps, double sided carbon tape, aluminum tape, copper tape, MFM tip holder, EBSD and transmissive EBSD holders.

PLEASE CONTACT:

YOU CAN FIND THE SEM IN NANOLAB NL1.042

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