ICMTS Hao Van Bui

At ICMTS 2014, Hao Van Bui presented a paper: An approach to characterize ultra-thin films protected against native oxidation by an in-situ capping layer. As ultra-thin films oxidize quickly upon the exposure to the air, which consequently changes their properties, a capping layer is needed to prevent the oxidation. The use of capping layer must ensure good electrical contact between the metal electrodes and the conducting films. Here, we propose a method to characterize electrical properties of ultra-thin metallic TiN films protected by a non-conducting amorphous silicon (a-Si) layer. The ohmic contact between the Pt-electrodes and the TiN films is obtained by the silicidation reaction between Pt and a-Si at a relatively low temperature (i.e. 200 oC).