Press report Tom van Hemert

Transistors, the workhorses of the electronics world, are plagued by leakage current. This results in unnecessary energy losses, which is why smartphones and laptops, for example, have to be recharged so often. Tom van Hemert and Ray Hueting of the University of Twente’s MESA+ Institute for Nanotechnology have shown that this leakage current can be radically reduced by “squeezing” the transistor with a piezoelectric material (which expands or contracts when an electrical charge is applied to it). Using this approach, they have smashed the theoretical limit for leakage current. For more information about this press report please check this webpage.