MESA+ University of Twente
NanoElectronics

Publications Floris Zwanenburg

>1000 citations. h-index: 13 (Web of Science, 2016)

25. Passivation and characterization of charge defects in ambipolar silicon quantum dots
P.C. Spruijtenburg, S. V. Amitonov, F. Mueller, W. G. van der Wiel & F. A. Zwanenburg
Scientific Reports 6, 38127, (2016)

24. Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
M. Brauns, J. Ridderbos, A. Li, E. P. A. M. Bakkers, W. G. van der Wiel & F. A. Zwanenburg
Applied Physics Letters 109, p. 143113 (2016).

23. Anisotropic Pauli spin blockade in hole quantum dots
M. Brauns, J. Ridderbos, A. Li, E. P. A. M. Bakkers, W. G. van der Wiel & F. A. Zwanenburg
Phys. Rev. B 94, 041441(R) (2016).

22. Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots
M. Brauns, J. Ridderbos, A. Li, E. P. A. M. Bakkers & F. A. Zwanenburg
Phys. Rev. B 93, 121408(R) (2016).

21. Electron–Hole Confinement Symmetry in Silicon Quantum Dots
F. Mueller, G. Konstantaras, P.C. Spruijtenburg, W. G. van der Wiel & F. A. Zwanenburg
Nano Letters 15, pp. 5336-5341 (2015).

20. Single-charge transport in ambipolar silicon nanoscale field-effect transistors
F. Mueller, G. Konstantaras, W. G. van der Wiel & F. A. Zwanenburg
Applied Physics Letters 106, p. 172101 (2015).

19. Quantumcomputers: hoe en wanneer? (Dutch)
R. Hanson & F.A. Zwanenburg
Nederlands Tijdschrift voor Natuurkunde 80, 6, (2014).

18. Silicon Quantum Electronics
F. A. Zwanenburg, A. S. Dzurak, A. Morello, M. Y. Simmons, L. C. L. Hollenberg, G. Klimeck, S. Rogge, S. N. Coppersmith & M. A. Eriksson
Reviews of Modern Physics 85, 961 (2013).

17. Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
P.C. Spruijtenburg, J. Ridderbos, F. Mueller, A. W. Leenstra, M. Brauns, A. A. I. Aarnink, W. G. van der Wiel & F. A. Zwanenburg
Applied Physics Letters 102, 192105 (2013).

16. Printed Circuit Board Metal Powder Filters for Low Electron Temperatures
F. Mueller, R. N. Schouten, M. Brauns, T. Gang, W. H. Lim, N. S. Lai, A. S. Dzurak, W. G. van der Wiel & F. A. Zwanenburg
Review of Scientific Instruments 84, 044706 (2013)

15. High-fidelity readout and control of a nuclear spin qubit in silicon
J. J. Pla, K. Y. Tan, J. P. Dehollain, W. H. Lim, J. J. L. Morton, F. A. Zwanenburg, D. N. Jamieson A. S. Dzurak & A. Morello
Nature, 496, p. 334 (2013).

14. Independent Control of Dot Occupancy and Reservoir Electron Density in a One‐electron Quantum Dot
W. H. Lim, F. A. Zwanenburg, C. H. Yang, H. Huebl, M. Möttönen, K. W. Chan, C. C. Escott, A. Morello & A.S. Dzurak
AIP Conf. Proc. 1399, 349 (2011)

13. Dynamically controlled charge sensing of a few-electron silicon quantum dot
C.H. Yang, W.H. Lim, F.A. Zwanenburg & A.S. Dzurak
AIP Advances 1, 042111 (2011)

12. Pauli spin blockade in a highly tunable silicon double quantum dot
N.S. Lai, W.H. Lim, C.H. Yang, F.A. Zwanenburg, W. A. Coish, F. Qassemi, A. Morello & A.S. Dzurak
Scientific Reports 1, 110, (2011)

11. Spin filling of valley-orbit states in a few-electron silicon quantum dot
W.H. Lim, C.H. Yang, F.A. Zwanenburg & A.S. Dzurak
Nanotechnology 22, p. 335704 (2011)

10. Uitlezen van een enkele elektronspin in silicium (Dutch)
F.A. Zwanenburg & A. Morello
Nederlands Tijdschrift voor Natuurkunde 76, 11, (2010).

9. Single-shot readout of an electron spin in silicon
A. Morello, J.J. Pla, F.A. Zwanenburg, K.W. Chan, H. Huebl, M. Möttönen, C.D. Nugroho, C. Yang, J.A. van Donkelaar, A.D.C.Alves, D.N. Jamieson, C.C. Escott, L.C.L. Hollenberg, R.G. Clark & A.S. Dzurak
Nature 467, p. 687 (2010).

8. Spectroscopy of few-electron single-crystal silicon quantum dots
M. Fuechsle, S. Mahapatra, F.A. Zwanenburg, M. Friesen, M.A. Eriksson & M.Y. Simmons
Nature Nanotechnology 5, p. 502 (2010).

7. Resonant tunnelling features in quantum dots
C.C. Escott, F.A. Zwanenburg & A. Morello
Nanotechnology 21, p. 274018 (2010).

6. Probe and control of the reservoir density of states in single-electron devices
M. Möttönen, K.Y. Tan, K.W. Chan, F.A. Zwanenburg, W.H. Lim, C.C. Escott, J.-M. Pirkkalainen, A. Morello, C. Yang, J.A. van Donkelaar, A.D.C. Alves, D.N. Jamieson, L.C.L. Hollenberg & A.S. Dzurak
Physical Review B 81, p. 161304(R) (2010).

5. Observation of the single-electron regime in a highly tunable silicon quantum dot
W.H. Lim, F.A. Zwanenburg, H. Huebl, M. Möttönen, K.W. Chan, A. Morello & A.S. Dzurak
Applied Physics Letters 95, p. 242102 (2009).

4. Electric field control of magnetoresistance in InP nanowires with ferromagnetic contacts
F.A. Zwanenburg, H.B. Heersche, D.M. van der Mast, E.P.A.M. Bakkers & L.P. Kouwenhoven
Nano Letters 9, pp. 2704–2709 (2009).

3. Ultrasmall silicon quantum dots
F.A. Zwanenburg, A.A. van Loon, G.A. Steele, C.E.W.M. van Rijmenam, T. Balder, Y. Fang, C.M. Lieber & L.P. Kouwenhoven
Journal of Applied Physics 105, p. 124314 (2009).

2. Spin states of the first four holes in a silicon nanowire quantum dot
F.A. Zwanenburg, C.E.W.M. van Rijmenam, Y. Fang, C.M. Lieber & L.P. Kouwenhoven
Nano Letters 9, pp. 1071–1079 (2009).

1. Scanned probe imaging of quantum dots inside InAs nanowires
A.C. Bleszynski, F.A. Zwanenburg, R.M. Westervelt, A.L. Roest, E.P.A.M. Bakkers & L.P. Kouwenhoven
Nano Letters 7, pp. 2559–2562 (2007).

PHD THESES

Matthias Brauns, University of Twente (2016)
Hole spins in Ge-Si nanowires

Filipp Müller, University of Twente (2015)
Single-charge tunneling in ambipolar silicon quantum dots

Floris Zwanenburg, Delft University of Technology (2008)
Spin and charge in semiconductor nanowires