Thursday 29 November 2018
High quality graphene nanoribbons epitaxially grown on sidewalls of Silicon Carbide mesastructures are key building blocks for graphene-based nanoelectronics. Researchers from the Physics of Interfaces and Nanomaterials group joint forces within an internation team of researchers from Germany, Spain, Ireland, Denmark and Sweden and published their findings recently in Nature Communications. They show, using spatially-resolved multi-probe measurements, that such ribbons display 1D single-channel ballisitic transport at room temperature, with exceptionally long mean free paths.
