Devices for Integrated Circuits

Chair: SC

Introduction

We study new materials, new device concepts, and new characterization techniques, to contribute to the advancement of silicon circuit technology. Focal points of our research are:

IC processing, covering topics including

·

CMOS wafer post-processing - can we fabricate new components on top of a microchip? See our position paper on this subject.

·

Novel devices – can we incorporate light emitting diodes, high-quality passives, gas sensors etc. into a CMOS process?

·

Nanotechnology, such as novel thin films, nanocrystal memories, ultrathin silicon, and silicon nanowires

Device characterization and reliability:

·

Novel characterization methods to measure the capacitance-voltage relation

·

Improving characterization methods to measure contact resistances

·

Reliability of MOS devices, interconnect, and novel devices

Device physics and modelling, covering topics including:

·

Ultra-thin silicon – can we understand and model silicon, when it is hardly three-dimensional anymore?

·

How is a bulk-acoustic-wave resonator modelled?

·

How are silicon LED’s modelled?

Programme mentor

dr. ir. C. Salm

Compulsory courses

Code

Course

Study load (EC)

Quarter

191210730

Technology

5

1B

191211440

Integrated Circuit Technology

5

2A

191211000

Advanced Semiconductor Devices

5

Year

191616040

Philosophy of Engineering

5

1B

One additional compulsory course will be chosen by the programme mentor from the following list, after discussion with the student:

Code

Course

Study load (EC)

Quarter

191210740

Material Science

5

1A

191210750

System-on-Chip Design

10

1A, 1B

191210850

Advanced Analog IC Electronics

5

2A

193400141

Nanoelectronics

5

1B

Website for more information

http://www.utwente.nl/ewi/sc/