Devices for Integrated Circuits
Chair: SC
Introduction
We study new materials, new device concepts, and new characterization techniques, to contribute to the advancement of silicon circuit technology. Focal points of our research are:
IC processing, covering topics including
· |
CMOS wafer post-processing - can we fabricate new components on top of a microchip? See our position paper on this subject. |
· |
Novel devices – can we incorporate light emitting diodes, high-quality passives, gas sensors etc. into a CMOS process? |
· |
Nanotechnology, such as novel thin films, nanocrystal memories, ultrathin silicon, and silicon nanowires |
Device characterization and reliability:
· |
Novel characterization methods to measure the capacitance-voltage relation |
· |
Improving characterization methods to measure contact resistances |
· |
Reliability of MOS devices, interconnect, and novel devices |
Device physics and modelling, covering topics including:
· |
Ultra-thin silicon – can we understand and model silicon, when it is hardly three-dimensional anymore? |
· |
How is a bulk-acoustic-wave resonator modelled? |
· |
How are silicon LED’s modelled? |
Programme mentor
· |
dr. C. Salm |
Compulsory courses
Code |
Course |
Study load (EC) |
191210730 |
Technology |
5 |
191211440 |
Integrated Circuit Technology |
5 |
191211000 |
Advanced Semiconductor Devices |
5 |
One additional compulsory course will be chosen by the programme mentor from the following list, after discussion with the student:
Code |
Course |
Study load (EC) |
191210740 |
Material Science |
5 |
191411281 |
Introduction Quantum-mechanics (Dutch) |
5 |
191210750 |
System-on-Chip Design |
10 |
191210850 |
Advanced Analog IC Electronics |
5 |
193400141 |
Nanoelectronics |
5 |
Website for more information